Abstarct: CMOS spiral inductors are used in a vast variety of applications in radio frequency including impedance matching and gain-boosting, bandwidth improvement, oscillators, modulators, RF bandpass filters, RF phase shifters and RF power dividers. Passive inductors are off-chip discrete components. These components severely limit the bandwidth, reduce the reliability, and increase the cost of systems. In comparison to spiral inductors, CMOS active inductors provide beneficial advantages including low die area, large and tunable self-resonant frequency, large and tunable inductance, large and tunable quality factor and compatibility with digital CMOS technologies. However, the applications of active inductors are affected by several difficulties arising from the intrinsic characteristics of MOS devices. These difficulties include a high level of noise, high sensitivity to process variation, and vulnerability to supply voltage fluctuations. In this dissertation a gyrator-baxsed CMOS active inductor has been analyzed, designed and simulated. The proposed active inductor employs a current reuse active inductor as the basic structure and by adding a common-source stage, functioning as a gm-boosting stage, noise performance of the proposed active inductor has been improved. In order to further improve of quality factor, a resistor has been placed in feedback path. Mathematical analysis proves significant improvements in noise performance and quality factor of the proposed active inductor compared to the conventional structure. Performance verification of the proposed structure and determining its effect on noise and quality factor has been done by simulation of the circuit using TSMC 0.18 um CMOS process in ADS. Simulation results show inductive range of 1-7.2 GHz, value of inductance of 9nH at 2.864 GHz, maximum quality factor of 90 at 2.864 GHz, and also quality factor of above 40 in 2.4-3.3 GHz. Power supply is 1.8 V with a power consumption of 650 uW. The input referred noise at 2.864 GHz, where maximum quality factor occurs, is 22 pA/sqrt(Hz), which has been improved by 24 % compared to conventional structure.