Abstarct: Via chemical vapor deposition and an electric tube furnace, a successful synthesis of different one dimensional nitride semiconducting nanoarchitectures was performed. To do so, a nitride semiconductor nanostructure growth system was designed. The system consists of an electric tube furnace, active and carrier gas capsules, steel tubes and valves, steel tube ends, alumina and quartz tubes, flow meters, a gas scrubber and the water bath circulator. The reactions occur between the starting materials of the alumina boat and the ambience which relates to a thermal chemical vapor deposition technique. The products are obtained from two different thermal regions, the middle section with a reaction temperature ranging from 950 °C-1250 °C and the tube ends with an approximate temperature of 50 °C. It is obvious that these thermal regions affect the final nanostructure geometry. The obtained structures were of aluminum nitride (AlN) and silicon nitride (Si3N4) semiconductors in the form of various nanocrystals e. g. nanoneedles, nanorods, micro urchins, nanowires, nanocages & nanoparticles. Some of these structures are in a quasi-aligned state while some are being reported for the first time (wired nanocages and nanochips). The data provided came from SEM, XRD, XRF, EDX and Photluminescence analysis techniques. The analysis results provide valuable information dealing with structure morphology, crystal lattice, elemental composition and optical properties needed for growth mechanism identification. Product variety is the result of thermodynamic parameter regulation and control i. e. growth time, reaction temperature, active & carrier gas flow control, catalyst employment, substrate temperature, etc. baxsed on the obtained data, a growth mechanism is proposed. Our proposed growth mechanism is baxsed on a series of physical processes and phenomena like the surface and mass diffusion processes, the kirkendall effect and the VLS and VTCP growth mechanisms to name a few. It is shown that although aluminum nitride nanostructure formation is initially activated by the VLS mechanism, the VTCP mechanism will ultimately take over the growth process. As for silicon nitride, the nanostructures grew directly from the chemically treated silicon substrate to form a nanoneedle quasi-array. The provided growth technique is both simple and economical, which results the incorporation of AlN nanostructures in LEDs and the installation of Si3N4 nanoneedles as AFM probes.