Abstarct: Some unique physical properties of (In)GaNAs as dilute nitride semiconductors caused to be as an interesting material for infrared diode lasers, high efficiency multiple junction solar cells and other electronic devices. It is found that the addition of a small fraction of nitrogen mole fraction (less than 5%) to GaAs could lead to a drastic reduction in the band gap of this material, while the electrons’ effective mass increases. The experimental data also show that the as-grown samples have a low electron mobility and density. Here in this theoretical research work we are interested to study the effects of annealing and hydrogenation on electrical transport properties of dilute nitride semiconductors, GaNAs (doped with Si and Te) and InGaNAs (pure and doped with Si). Through this investigation our analysis on reported temperature dependence of electron density and mobility data is baxsed on charge neutrality condition and various important scattering mechanisms, respectively. Our data analysis show that in general applying the rapid thermal annealing process could reduce the density of the electron trap centers related to nitrogen atoms which in turn lead to an increment in carriers’ concentration and mobility. It should also be noted that the increments of carrier density in Si-doped samples are not as much as those which are doped with Te. This could be due to Si-passivation effect of Si-N pair formations in these samples. In hydrogenated materials it is found that: (a) in undoped samples due to the role of hydrogen as a donor atom and formation of mono and di- hydrogenate complexes lead to an increase band gap and also improvement in the electrical transport properties of the material; (b) in n-type doped samples part of the hydrogen atoms act as acceptor centers and therefore passivate their donation characteristic. This will lead to a reduction in the carriers’ concentration.