Abstarct: Abstract Most connections in spintronics systems are typically mextallic. However, in these systems, spin accumulation tends to decay over time and distance from the common interface. In order for spin accumulation to be transported over longer distances, it is important to use systems with a large spin relaxation length. Graphene, which has a weak spin-orbit interaction, possesses a large spin relaxation length, making it an ideal candidate for transporting spin accumulation over longer distances. Therefore, graphene plays a crucial role in the field of spintronics as it provides an excellent environment for spin accumulation transport. The specific system that has been studied is a graphene/molecular spin valve, which consists of a junction between two ferromagnets with a laxyer of graphene in-between, and a magnetic molecule placed on the graphene laxyer. This magnetic molecule contains a quantum dot (QD) level and a localized magnetic moment, both of which exhibit exchange interaction. By manipulating various factors such as gate voltage, bias voltage, external magnetic fields (weak and strong), and axial homogeneous strain, the charge and spin currents in the graphene/molecular junction (GMJ) have been investigated. Through applying gate and time-dependent bias voltages, it has been demonstrated that the behavior of the studied system can be controlled. By applying a magnetic field, it has been shown that the response time of the current is fast and the steady-state current is non-zero, which is crucial for the practical control of spintronic systems. Finally, by introducing strain, it has been observed that the charge and spin currents experience displacements in their minima and maxima, depending on factors such as the interaction coefficient between graphene and the molecule, time, gate voltage, and bias.