Abstarct: In this research, we have investigated the surface morphology, structural, electrical and optical properties of nanostructured zinc oxide (ZnO) thin films grown on glass substrate by sol-gel spin coating method in order to achieve laxyers with high transparency and conductivity. For characterization of the synthesized samples we used: Field Emission Scanning Electron Microscopy (FESEM), X-ray diffraction (XRD), Hall effect, Ultraviolet-Visible (UV-Vis) and photoluminescence (PL) spectroscopies. Through the synthesis of zinc oxide thin laxyers we used zinc acetate dehydrate (Zn(CH3COO)2•2H2O) and different solvents “ethanol” and “2-methoxy ethanol”. In the beginning, using ethanol as the solvent, we studied the effect of thickness in pure laxyers and also the influence of aluminum (Al) doping (various weight percentages of 2, 4, 6 & 8 compare to zinc acetate). In continue, using 2-methoxy ethanol as the solvent we found from structural point of view, the suitable annealing temperature is 500 ℃. baxsed on this fact, using 2-methoxy ethanol as the solvent, we investigated the effect of the thickness in pure laxyers and also the influence of Al-doping (various weight percentages of 2, 4 & 6 compare to zinc acetate). Finally, the influences of nitrogen (N) doping using two different chemical compounds (dimethylformamid and ammonium acetate) were studied. The XRD spectra confirmed the formation of ZnO hexagonal phase in all synthesized samples. The optical data showed the effect of thickness and the amount of impurities on optical transparency of the laxyers in the visible and infra-red range, and the optical analysis clarified the variation of band gap in the range of 3.21-2.29 eV due to band tail corresponding to crystalline defect and/or quantum confined effect. From electrical properties of the laxyers at room temperature it is found that all pure samples have a very high sheet resistance, but in Al-doped laxyers synthesized by ethanol solvent are in range of 1-4 MΩ/sq., those synthesized by 2-methoxy ethanol are in range of 0.2-0.7 MΩ/sq., and in N-doped samples it is in the range of 200-700 MΩ/sq. Also PL spectra showed that the UV peak (less than 400 nm) is due to band to band recombination, and the emitted peaks in the visible range are due to recombination of crystalline defects related levels in the band gap of the prepared samples.