Abstarct: Nowadays, the diluted magnetic semiconductors (DMS) are attracted much attention for their large applications in spintronics and abundant studies are performing both from experimental and theoretical point of views. In spintronics is struggling to use of spin property of carriers (electron/hole) in a company with their charge properties. Due to these properties, study of transition mextal doped II-VI and III-IV compounds are interested. For application of these materials in spintronics, their Curie temperature must increase to room or upper temperatures. Curie temperature can be increased with a correct selection of both host and dopant material. In this thesis, zinc oxide (a wide band gap semiconductor) was chosen as a host and transition mextal, Mn, Fe, Co and Ni as a dopant. The samples were grown by dip-coating sol-gel technique. Using this growth method, the undoped and doped (smaller than 5% of transition mextals) nanofilms of zinc oxide with thickness between 100-300 nanometers were prepared. Then the effect of different physical parameters such as doping concentrations, annealing temperature, thickness of the film and type of solvent on the structural, optical and magnetic properties of the films were studied. The XRD spectra of the grown nanofilms showed that all samples have hexagonal structure. The morphology of surfaces of the nanofilms were investigated by atomic force microscopy (AFM) device and showed that the surfaces are smooth and have a small roughness. The transmittance spectra of samples showed that all are transparent in the visible region with transparency between 80-90 percentages. The optical constants (refractive index, extinction coefficient and penetration depth) of the nanofilms were calculated by using of pointwise unconstrained minimization algorithm and fitting the data to the Cauchy formula. The magnetic properties of the nanofilms were studied by magnetic force microscopy (MFM) and measuring hysteresis loop. The results of these measurements showed that the Mn doped film have paramagnetic property and the other films have the ferromagnetic property at room temperature. In the end, electron mobility of the carriers arising from exchange scattering potential in diluted magnetic semiconductors in the paramagnetic phase was theoretically studied by Heisenberg’s model