Abstarct: In this work we have theoretically investigated the electrical transport and electronic properties of two dimensional electron gas at the interface of different heterostructures related to the nitride semiconductors materials such as AlGaN/GaN, AlInN/GaN and ... . These calculations are mainly baxsed on the Fermi-Dirac distribution and the Matthiessen’s rule in the study of changes in the maximum electron density and two dimensional (2D) electron gas mobility as a function of temperature, respectively. Our theoretical analysis results indicate that in the AlxGa1-xN/GaN structures: 1- As the mole fraction of aluminum (x) in the barrier laxyer increases not only the mobility of the 2D electron decreases as a result of the increment of the crystal dislocations, but also the sheet density of these carriers increases and this in turn leads to a larger internal electric field and narrower quantum well width. 2- Considering the effect of substrate, we found that the use of silicon carbide (with closer lattice match to GaN) instead of sapphire tend to the reduction of the crystal defects in the well therefore a higher 2D electron mobility. 3- In studying the influence of barrier laxyer thickness we found that by increasing the barrier thickness from a critical value (about 65-75 nm), the interface bonds of barrier and quantum well laxyers are relaxed. This phenomenon leads to the increment of the crystal dislocations density and reduction of the 2D electron gas mobility. 4- In investigating the effect of presence of spacer laxyer we found that the growth of this laxyer will tend to a lower crystal dislocations density, which in turn lead to higher 2D electron mobility.