Abstarct: In 1990s a variety of reports baxsed on the measuring of the transport properties of Dilute-Nitride semiconductors including Iny(Al)GaNxAs (x<5%) have been presented. The presence of a few percent of N atoms in the crystal lattice, unlike common alloyed semiconductors, could cause a remarkable band-gap reduction. In this thesis, we are mainly interested in the data analysis of the electrical transport properties of unintentionally doped MBE-grown GaNAs, InGaNAs and AlGaNAs laxyers. From the mobility data analysis of a number of samples containing different amount of nitrogen molar fractions (x), we have found that (a) scattering mechanisms including random alloy and N-cluster alloy have the dominant role in deteriorating the carrier mobility due to the formation of N-clusters in the samples. (b) Increasing the amount of nitrogen molar fraction, leads to a drop in electron concentration as a result of more N-related trap states formed in the laxyers and (c) the reason for the improvement of the crystal lattice quality in Iny(Al)GaNxAs alloys in comparison with ternary GaNAs, could be the weakening of the cluster alloy and crystal dislocation scattering in the quaternaries.