Abstarct: Plasmonic lasers produce and amplify surface plasmons. The plasmonic wavelength is less than the wavelength of photons, so the advantage of plasmonic lasers compared with photonic lasers is to overcome the diffraction limit and light emission in smaller dimensions. The main problem with plasmonic lasers is the high mextal losses that reduces the length of surface plasmons emision. To solve this problem, the active media is used to generate the gain and overcome losses. In this structure, the p-n junction is used to create population inversion conditions. The gain media is placed in the middle of the structure, and because of diffrence between bandgap of p and n laxyers with the gain media, heterojunction is formed on both sides of the gain media, so the carriers confine in the middle of the structure and increase the recombination process. Electric pumping is used in this structure because the optical pumping need a large waveguide or laser and occupies more space. The InP is used for the semiconductor of p and n laxyers, and the semiconductor of gain media is InGaAs. The p-n junction is on the forward bias and in contact with gold plasmonic mextal. The wavelength of free space is considered to be about 1.5 µm, which is an applied wavelength in photonic circuits and is proportional to the wavelength of the released photons from the semiconductor recombination process. The reflectance of mirrors on both sides of the cavity are considered 100% and 99%. The bias voltage applied to the structure is 1.2v and the laser absorption coefficient at this voltage is . So the optical gain in this plasmonic laser with 50nm for cavity length is obtained . The laser consumed power at the operating voltage is 1200µw and the output power of the laser by simulating the structure in Silvaco software is obtained about 600 µw. Therefore, the laser efficiency is equal to 50%.