Abstarct: Pulse generator with low rise time and minimal disturbance are specialized equipment utilized in specific industries. These devices possess characteristics such as high voltage generation, strong electric fields, low rise time (indicative of high frequency), and minimal disturbance. These attributes are employed for synchronization and connection to sensitive equipment, especially in industries requiring precise and high-quality electrical energy transmission. Marx circuits are a fundamental method for producing high voltage pulses with sub-nanosecond durations at high repetition rates. However, traditional avalanche Marx circuits (TAMC) struggle to achieve frequencies of 100 KHZ and often fall near the one-kilohertz mark. Using a microstrip transmission line resolves this issue. The project's objective was to simulate a Marx generator employing a breakdown model using the FMMT417 transistor model, investigating the effects of various component variations on the output waveform in the PSPICE software. The primary issue lies in the high vulnerability of the second-stage transistor. Through an analysis of its discharge mechanism, it was identified that the damage to the second-stage transistor correlates with the slow activation of the first-stage transistor. Essentially, the first-stage transistor is the last to fail due to the breakdown, causing the previously excited second-stage transistor to be momentarily subjected to a very high electrical stress. This electrical stress is the inactive voltage of the second stage directly contributing to the vulnerability of the second-stage transistor. Consequently, an improved Marx breakdown circuit has been proposed, suppressing the inactive voltage by connecting a protective resistance in series with the second-stage transistor. This research not only focused on voltage and rise time but also investigated the transistors' current-carrying capacity under different loads. The 417FMMT transistors exhibit superior performance due to their high current-carrying capabilities in short pulses compared to other transistors. Simulation results did not closely align with the designed circuit due to the inadequacy of suitable laboratory equipment.