Abstarct: Through the last decade wide research programs have considered the physical properties of (In)GaAs1-xNx as dilute nitride semiconductors. In these materials with small and direct band gap of about 1eV useful applications in electronic and optoelectronic devices is expected. Among those AlGaAs/(In)GaAs1-xNx heterostructures with square and triangular quantum wells have found great interests due to their unique properties of two dimensional electron gas (2DEG) formation close to the interface can be used as a conductive channel. In this research work we are mainly interested on the data analysis of the electrical transport properties of two dimensional electron gas in various dilute nitride semiconductor heterostructures grown by MBE method. These analyses are mainly baxsed on Fermi-Dirac distribution and Matthiessens’s rule for the variations of electron density and their mobility versus temperature, respectively. According to our results: (a) scattering mechanisms including N-cluster alloy, random alloy and N-related dislocations are the dominant scattering mechanism deteriorating the 2D electron mobility; (b) an increment in the nitrogen molar fraction of the quantum well laxyer leads to a drop in the electron concentration as a result of more N-related trap states in the laxyer; (c) annealing process affects on crystal defects reduction and this in turn improves the electron mobility in the material.