Abstarct: There are a wide range of semiconductors doped with transition mextals (magnetic atoms) which are known as diluted magnetic semiconductors, DMS. On the other hand DMSs produced from compounds of III-V semiconductors , groups due to their applications in spintronics, have attracted by most of researchers. Growth of demand for solid state electronic devices which to have more quality and speed in comparison to existing samples, caused great attention to GaAs compounds. In this work the electronic and magnetic properties of pure and doped GaAs nanotubes with Transition mextals (V, Cr, Mn, Fe, Co, Sc, Ti, Ni) using spin polarized density function theory and localized density approximation (LDA) approach by SIESTA code. Have been studied Calculations has been done on pure armchair (4,4), (5,5), (6,6), (7,7), (8,8), (9,), (10,10), (12,12), (14,14), (16,16), (18,18), (20,20) and zigzag (4,0), (5,0), (6,0), (,7,0), (8,0), (9,0), (10,0), (12,0), (14,0), (16,0), (18,0), (20,0) nanotubes. The electronic calculations revealed that these GaAs nanotubes are semiconductors. (3,3) and (5,5) armchair and (5,0) and (9,0) zigzag nanotubes have been doped by transition mextals. The results from this study can be used for future experimental studies on diluted magnetic semiconductors. Considering the obtained results from this study and flexibility of GaAs nano-tubes in presence of doping and having fero-magnetic property in room temperature, GaAs nanotubes doped with transition mextals are offered as good candidate to be applied in spintronic devises, spin current filters and spin current injectors.