Abstarct: III–V alloys containing low percentage of nitrogen ,such as GaNAs(P) and GaInNAs(P), have received considerable attention during the past few years due to their extended wavelength emission that can be used in optoelectronic devices baxsed on these materials. On the other hand hydrogen, the simplest element with a light mass, high diffusivity and strong chemical reactivity, is a common impurity that is abundantly present in the most steps of semiconductor growth and device processing. Due to its high chemical reactivity, hydrogen can efficiently interact with all type of defects in materials, including shallow impurities, dangling bonds, and deep defect centers. The latter often increases radiative efficiency of semiconductors, and thus can improve the optical quality and change the electrical properties of dilute nitrides. In this thesis, we have studied the optical , electrical and structural properties of dilute GaNxAs1-x and GaNxP1-x alloys after hydrogenation , by using of photoluminescence (PL) , photoluminescence excitation (PLE) and Raman spectroscopy and high-resolution X-ray diffraction (HRXRD) measurements.