TK889 : Linearization of the integrated resistors to reduce the temperature dependence of voltage reference circuits
Thesis > Central Library of Shahrood University > Electrical Engineering > MSc > 2022
Authors:
[Author], Emad Ebrahimi[Supervisor], [Advisor]
Abstarct: Integrated resistors are an integral part of most electronic circuits, especially in circuits such as voltage and current reference where the temperature coefficient of resistors is important. In this thesis, we will examine voltage and current reference circuits that are not linear resistors for the purpose of converting voltage to current and vice versa and are dependent on temperature. baxsed on the combination and material some of them include well, diffusion, and poly which have PTAT, PTAT, and CTAT temperature behavior respectively. In order to linearize integrated resistors in voltage reference circuits, the technique of ratio of two different resistors has been used, which has resulted in the removal of higher non-linear components and the effect of the temperature coefficient of resistance has been removed in the voltage reference circuit. But in current reference circuits, because of the use of a resistor to convert voltage into current, the ratio of resistors cannot be used. Therefore, a new unit resistance network is presented. This resistance network has high linearity (temperature coefficient near-zero). It also has a fixed structure and temperature coefficient against the increase of the resistance value. In this thesis, we will examine circuit solutions that provide the possibility of implementing linear resistances independent of temperature for use in voltage and current references. Reducing the temperature dependence of integrated resistors will be explored by creating a unique resistance network and optimizing it by genetic algorithm for use in voltage and current reference circuits to reduce temperature dependence. In this thesis, a new voltage reference circuit in which the ratio of resistances is used in order to remove the temperature dependence of resistances. The post-layout simulation results in 180 nm CMOS technology show that the reference voltage is 494 millivolts. Also, the temperature coefficient and power consumption are equal to 58.4 ppm/°C and 3.48 nanowatts, respectively. Then, a unique resistance network with the ability to select desire resistance value with a 3.1 ppm/°C temperature coefficient, that has a fixed structure is presented for use in current reference circuits.
Keywords:
#voltage reference #current reference #resistance network #PTAT #CTAT #temperature coefficient #genetic algorithm #reliability Keeping place: Central Library of Shahrood University
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