Abstarct: Combinations of dilute Nitride like GaInNP(As) because of this wonderful quality and also unusual in the comparison with N-free group III-V and recently, they always pay attention to the usage of these combinations is in optoelectronic and photonic in industry that use them in making In fra-red(IR) lasers and Hetrojuntion Bipolar Transistor. In this way observation of phenomenon Anti-Stokes Photoluminescence in these combinations lead to increasing efficiency of energy (frequency conversion) about 700 meV is very important. So in this thesis for a beginning, we introduce the phenomenon of Anti-Stokes Photoluminescence and investigation of detailed mechanisms for the energy conversion.then investigate some reports of observation of this phenomenon in combination of semiconductor and usage of that in semiconductor industry. To end of results we show on the basis of nitrogen concentration on disordered GaInP/GaAs structures lead to highly efficient Anti-Stokes Photoluminescence. The first study revealed that efficiency of process of ASPL strongly related to concentration of nitrogen. Our conclusion on this problem is that the change in the kind of band alighnment in the samples studied heterointerface is on account of existence of nitrogen.in addition to conclusion of measurements showed that the intensity signal of ASPL emission from a linear relation. Also transient PL mesurments(TRPL) were find to be nonexponential. With the observation signal ASPL with highly efficiency even at very low excitation densities, in our idea TS-TPA mechanism for justifying this energy up conversion. In this process most probably from other mechanisms.