University: University of Surrey, U.K. Research Interests: Semiconductor Optoelectronics (materials and devices) Professional & Scientific Membership: Awards & Patents: Biography:
Eshghi, Hosein, "Concepts of Modern Physics", , 2007
Eshghi, Hosein - Azizi, Hasan, "The Solid State", , 1997
Papers
H. R. Alaei, H. Eshghi, R. Riedel, D. Pavlidis, "Thermal stress and strain in GaN epitaxial layer grown on sapphire substrate by MOCVD method", Chinese Journal of Physics, Vol 48, No 3, pp. 400-407, 2010
H. Eshghi, Mahnaz Mootabian, "A quantitative study on the effect of nitrogen concentration on two-dimensional electron gas (2DEG) mobility in a dilute nitride GaAsN/AlGaAsN heterostructure", Solid State Communications, Vol 151, No 1, pp. 80-83, 2011
H. R. Alaei, H. Eshghi, "Theoretical Modeling for Quantum-Confined Stark Effect due to Internal Piezoelectric Fields in GaInN Strained Quantum Wells", Physics Letters A, Vol 374, pp. 66-69, 2009
H. Eshghi, F. Shariatmadar Tehrani, "A quantitative study of nitrogen content influence on the carrier mobility in GaNxAs1-x (0.008", Journal of Optoelectornics and Advanced Materials (JOAM), Vol 11, pp. 1467-1470, 2009
H. Eshghi, M. Ameri, "Determination of electron trap density in dilute nitride GaNAs and InGaNAs semiconductors", International Conference on Materials for Advanced Technologies (MRS-S), 2009
H. Eshghi, "The effect of hydrostatic pressure on material parameters and electrical transport properties in bulk GaN", Physics Letters A, Vol 373, pp. 1773-1776, 2009
H. Eshghi, M. Mohammadi, "The effect of nano and micro porosity on the Schottky barrier height and ideality factor in the I-V characteristics of PtSi/p-Si IR detector", Modern Physics Letters B, Vol 23, pp. 765-771 (2009), 0
Journal Papers
H. Eshghi, M. Mohammadi, "18- The effect of nano and micro porosity on the Schottky barrier height and ideality factor in the I-V characteristics of PtSi/p-Si IR detector", Modern Physics Letters B, Vol 23, No 765, pp. 2009, 2014